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Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics
Author(s) -
MengYin Wu,
Juan Zhao,
Feng Xu,
TzuHsuan Chang,
Robert M. Jacobberger,
Zhenqiang Ma,
Michael S. Arnold
Publication year - 2015
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4928041
Subject(s) - materials science , carbon nanotube , nanotube , elongation , field effect transistor , nanotechnology , optoelectronics , carbon nanotube field effect transistor , stretchable electronics , dielectric , substrate (aquarium) , elastomer , transistor , composite material , voltage , ultimate tensile strength , electronics , electrical engineering , oceanography , engineering , geology

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