Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors | Zendy

Thangavel Kanagasekaran | Zendy; Hidekazu Shimotani | Zendy; Susumu Ikeda | Zendy; Hui Shang | Zendy; Ryotaro Kumashiro | Zendy; Katsumi Tanigaki | Zendy

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Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

Author(s) -

Thangavel Kanagasekaran,

Hidekazu Shimotani,

Susumu Ikeda,

Hui Shang,

Ryotaro Kumashiro,

Katsumi Tanigaki

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4927651

Subject(s) - materials science , ambipolar diffusion , optoelectronics , electrode , field effect transistor , schottky barrier , schottky diode , dielectric , organic semiconductor , active layer , gate dielectric , semiconductor , thin film , schottky effect , insulator (electricity) , work function , electron , transistor , electric field , layer (electronics) , thin film transistor , nanotechnology , diode , chemistry , electrical engineering , physics , quantum mechanics , voltage , engineering

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