Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode | Zendy

Katsuhiko Nishiguchi | Zendy; Andrés Castellanos-Gómez | Zendy; Hiroshi Yamaguchi | Zendy; Akira Fujiwara | Zendy; Herre S. J. van der Zant | Zendy; Gary A. Steele | Zendy

Open Access

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Author(s) -

Katsuhiko Nishiguchi,

Andrés Castellanos-Gómez,

Hiroshi Yamaguchi,

Akira Fujiwara,

Herre S. J. van der Zant,

Gary A. Steele

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4927529

Subject(s) - heterojunction , materials science , quantum tunnelling , optoelectronics , diode , silicon , transistor , tunnel diode , band gap , conduction band , voltage , electrical engineering , electron , engineering , physics , quantum mechanics

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS2 layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.QN/Quantum NanoscienceApplied Science

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