Disorder driven structural and dielectric properties of silicon substituted strontium titanate
Author(s) -
Sita Dugu,
Shojan P. Pavunny,
Yogesh Sharma,
J. F. Scott,
Ram S. Katiyar
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4927042
Subject(s) - strontium titanate , dielectric , materials science , ferroelectricity , raman spectroscopy , arrhenius equation , condensed matter physics , activation energy , dielectric loss , permittivity , band gap , dielectric spectroscopy , conductivity , analytical chemistry (journal) , chemistry , optoelectronics , optics , physics , organic chemistry , electrode , chromatography , electrochemistry
A systematic study on structural, microstructural, optical, dielectric, and electrical properties of phase-pure silicon-modified SrTiO3 polycrystalline electroceramics synthesized using high energy solid state reaction techniques is presented. The asymmetry and splitting in the x-ray diffractometer spectra and the observation of first order transverse optical TO2 and longitudinal optical LO4 modes in Raman spectra (nominally forbidden) revealed the distortion in the cubic lattice as a result of breaking of inversion symmetry due to doping. A bandgap Eg of 3.27 eV was determined for the sample by diffuse reflectance spectroscopy. A high dielectric constant of ∼400 and very low dielectric loss of ∼0.03 were obtained at 100 kHz near ambient conditions. The temperature dependence of the dielectric data displayed features of high temperature relaxor ferroelectric behavior as evidence of existence of polar nano-regions. The ac conductivity as a function of frequency showed features typical of universal dynamic ...
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