In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current | Zendy

Junichi Shiogai | Zendy; M. Ciorga | Zendy; M. Utz | Zendy; D. Schuh | Zendy; Makoto Kohda | Zendy; Dominique Bougeard | Zendy; Tsutomu Nojima | Zendy; D. Weiß | Zendy; Junsaku Nitta | Zendy

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In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

Author(s) -

Junichi Shiogai,

M. Ciorga,

M. Utz,

D. Schuh,

Makoto Kohda,

Dominique Bougeard,

Tsutomu Nojima,

D. Weiß,

Junsaku Nitta

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4923309

Subject(s) - condensed matter physics , quantum tunnelling , magnetoresistance , anisotropy , materials science , diode , symmetry (geometry) , magnetic field , physics , optoelectronics , quantum mechanics , geometry , mathematics

We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes

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