Natural patterning of templates on GaAs by formation of cracks | Zendy

Yuxin Song | Zendy; Hao Xu | Zendy; Yaoyao Li | Zendy; Mahdad Sadeghi | Zendy; Shumin Wang | Zendy

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Natural patterning of templates on GaAs by formation of cracks

Author(s) -

Yuxin Song,

Hao Xu,

Yaoyao Li,

Mahdad Sadeghi,

Shumin Wang

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4922961

Subject(s) - materials science , heterojunction , layer (electronics) , tensile strain , optoelectronics , template , lattice (music) , gallium arsenide , residual stress , substrate (aquarium) , stress relaxation , composite material , ultimate tensile strength , nanotechnology , oceanography , physics , creep , geology , acoustics

Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method

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