Photoluminescence-based detection of particle contamination on extreme ultraviolet reticles
Author(s) -
An Gao,
P. Rizo,
Luigi Scaccabarozzi,
Chris Lee,
Vadim Banine,
F. Bijkerk
Publication year - 2015
Publication title -
review of scientific instruments
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.605
H-Index - 165
eISSN - 1089-7623
pISSN - 0034-6748
DOI - 10.1063/1.4922883
Subject(s) - extreme ultraviolet lithography , reticle , photoluminescence , materials science , particle (ecology) , ultraviolet , extreme ultraviolet , lithography , contamination , particle size , optics , optoelectronics , analytical chemistry (journal) , chemical engineering , laser , environmental chemistry , physics , chemistry , ecology , oceanography , engineering , wafer , biology , geology
Here, we propose a comparison-free inspection technique to detect particle contamination on the reticle of extreme ultraviolet (EUV) lithography systems, based on the photoluminescence spectral characteristics of the contaminant particles and their elemental composition. We have analyzed the spectra from different particles found on reticles in EUV lithographic systems and have determined the minimum detectable particle size: 25 nm for organic particles and 100 nm for Al particles. Stainless steel coatings (50 nm thick and 50 × 50 μm2 in area) exhibit detectable photoluminescence, and the estimated minimum detectable particle is 2 μm
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