Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate | Zendy

Yasuto Hijikata | Zendy; Ryosuke Asafuji | Zendy; Ryotaro Konno | Zendy; Yurie Akasaka | Zendy; Ryo Shinoda | Zendy

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Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Author(s) -

Yasuto Hijikata,

Ryosuke Asafuji,

Ryotaro Konno,

Yurie Akasaka,

Ryo Shinoda

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4922536

Subject(s) - oxide , annealing (glass) , silicon carbide , materials science , growth rate , silicon , layer (electronics) , carbide , inorganic chemistry , chemical engineering , metallurgy , chemistry , nanotechnology , geometry , mathematics , engineering

Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from depth profiles of oxidized HfO2/SiC structures. With longer oxidation times, surface SiO2 growth transitioned to oxide/SiC interface growth. The influence of Si and C emission on the oxidation rate was investigated by real-time measurements of the oxide growth rate. Experimental observations of annealing-inserted oxidation and two-temperature oxidation indicated that the emission suppressed the oxidation rate

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