Open AccessUltra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications
Author(s) -
Steve Knebel,
Milan Pešić,
Kyuho Cho,
Jaewan Chang,
Hanjin Lim,
Nadiia Kolomiiets,
Valeri Afanas’ev,
Uwe Muehle,
Uwe Schroeder,
Thomas Mikolajick
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4922349
Subject(s) - dynamic random access memory , materials science , dram , capacitor , optoelectronics , dielectric , insulator (electricity) , chemical vapor deposition , tin , interconnection , stack (abstract data type) , oxide , reliability (semiconductor) , permittivity , random access memory , computer science , electrical engineering , voltage , semiconductor memory , metallurgy , computer hardware , programming language , engineering , operating system , computer network , power (physics) , physics , quantum mechanics
Aiming for improvement of the ZrO 2-based insulator properties as compared to the state-of-the-art ZrO 2/Al 2O 3/ZrO 2 stacks beyond 20 nm dynamic random access memory (DRAM) technology applications, ultra-thin (5 nm) ZrO 2/SrO/ZrO 2 stacks with TiN electrodes deposited by physical vapor deposition are addressed. By replacing the Al 2O 3 interlayer with SrO, the effective dielectric permittivity of the stack can be increased as indicated by electrical analysis. At the same time, no degradation of the insulating properties of the SrO-containing stacks and minor changes in the reliability, compared to an Al 2O 3 interlayer, are found. These results are indicating the possibility of further reducing the effective oxide thickness of the ZrO 2-based stacks to come close to 0.5 nm for future DRAM capacitors
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