Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy | Zendy

Bin Fang | Zendy; X. Zhang | Zendy; B. S. Zhang | Zendy; Zhongming Zeng | Zendy; Jianwang Cai | Zendy

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Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

Author(s) -

Bin Fang,

X. Zhang,

B. S. Zhang,

Zhongming Zeng,

Jianwang Cai

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4922297

Subject(s) - magnetoresistance , tunnel magnetoresistance , spintronics , condensed matter physics , materials science , perpendicular , electric field , magnetic field , magnetic anisotropy , anisotropy , tunnel junction , ferromagnetism , optoelectronics , quantum tunnelling , magnetization , physics , optics , geometry , mathematics , quantum mechanics

We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices

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