Graded band gap GaInNAs solar cells | Zendy

F. Langer | Zendy; Svenja Perl | Zendy; Sven Höfling | Zendy; M. Kamp | Zendy

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Graded band gap GaInNAs solar cells

Author(s) -

F. Langer,

Svenja Perl,

Sven Höfling,

M. Kamp

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4922279

Subject(s) - optoelectronics , materials science , wide bandgap semiconductor , band gap , gallium arsenide , solar cell , absorption (acoustics) , nitride , quantum well , layer (electronics) , wavelength , absorption edge , quantum efficiency , open circuit voltage , optics , voltage , nanotechnology , physics , laser , quantum mechanics , composite material

Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.

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