GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation | Zendy

Jincheng Li | Zendy; Kamran Forghani | Zendy; Yingxin Guan | Zendy; Wenyuan Jiao | Zendy; Wei Kong | Zendy; Kristen Collar | Zendy; Tong-Ho Kim | Zendy; T. F. Kuech | Zendy; April S. Brown | Zendy

Open Access

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

Author(s) -

Jincheng Li,

Kamran Forghani,

Yingxin Guan,

Wenyuan Jiao,

Wei Kong,

Kristen Collar,

Tong-Ho Kim,

T. F. Kuech,

April S. Brown

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4922139

Subject(s) - photoluminescence , raman scattering , intensity (physics) , raman spectroscopy , materials science , scattering , plasmon , epitaxy , range (aeronautics) , analytical chemistry (journal) , molecular physics , chemistry , optoelectronics , optics , physics , nanotechnology , composite material , layer (electronics) , chromatography

We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs1−yBiy. The LOPC mode is used to calculate the hole concentration in GaAs1−yBiy epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs1−yBiy is also found to be linearly related to the GaAs Fröhlich scattering intensity

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