Size control, quantum confinement, and oxidation kinetics of silicon nanocrystals synthesized at a high rate by expanding thermal plasma
Author(s) -
Lihao Han,
Miro Zeman,
Arno H. M. Smets
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4921760
Subject(s) - passivation , photoluminescence , silicon , materials science , nanocrystal , quantum dot , thermal oxidation , raman spectroscopy , chemical vapor deposition , fourier transform infrared spectroscopy , plasma enhanced chemical vapor deposition , high resolution transmission electron microscopy , transmission electron microscopy , analytical chemistry (journal) , kinetics , chemical engineering , nanotechnology , optoelectronics , chemistry , optics , physics , engineering , layer (electronics) , chromatography , quantum mechanics
The growth mechanism of silicon nanocrystals (Si NCs) synthesized at a high rate by means of expanding thermal plasma chemical vapor deposition technique are studied in this letter. A bimodal Gaussian size distribution is revealed from the high-resolution transmission electron microscopy images, and routes to reduce the unwanted large Si NCs are discussed. Photoluminescence and Raman spectroscopies are employed to study the size-dependent quantum confinement effect, from which the average diameters of the small Si NCs are determined. The surface oxidation kinetics of Si NCs are studied using Fourier transform infrared spectroscopy and the importance of postdeposition passivation treatments of hydrogenated crystalline silicon surfaces are demonstrated.Electrical Sustainable EnergyElectrical Engineering, Mathematics and Computer Scienc
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