Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb | Zendy

Adam P. Craig | Zendy; Manish Jain | Zendy; G. W. Wicks | Zendy; T. Golding | Zendy; Khalid Hossain | Zendy; Ken McEwan | Zendy; Chris R. Howle | Zendy; B. Percy | Zendy; Andrew Marshall | Zendy

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Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Author(s) -

Adam P. Craig,

Manish Jain,

G. W. Wicks,

T. Golding,

Khalid Hossain,

Ken McEwan,

Chris R. Howle,

B. Percy,

Andrew Marshall

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4921468

Subject(s) - dark current , molecular beam epitaxy , infrared , materials science , optoelectronics , wavelength , photodetector , detector , photodiode , optics , infrared detector , arrhenius equation , absorption (acoustics) , lattice (music) , physics , chemistry , epitaxy , layer (electronics) , activation energy , nanotechnology , organic chemistry , acoustics

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures

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