Auger recombination rates in dilute-As GaNAs semiconductor | Zendy

Chee-Keong Tan | Zendy; Nelson Tansu | Zendy

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Auger recombination rates in dilute-As GaNAs semiconductor

Author(s) -

Chee-Keong Tan,

Nelson Tansu

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4921394

Subject(s) - auger , auger effect , alloy , materials science , recombination , atomic physics , conduction band , semiconductor , condensed matter physics , auger electron spectroscopy , chemistry , metallurgy , optoelectronics , electron , physics , nuclear physics , biochemistry , gene

The evaluation of Auger recombination process for dilute-As GaNAs alloy is presented. Our analysis indicates the suppression of interband Auger recombination mechanism in dilute-As GaNAs alloy in the green spectral regime. The interband Auger coefficient in dilute-As GaNAs alloy is shown as two orders of magnitude lower than that of its corresponding intraband Auger rate. Our results confirm that the second conduction band has a negligible effect on the interband Auger process in dilute-As GaNAs alloy due to the non-resonant condition of the process. Our findings show the importance of dilute-As GaNAs as an alternative visible material with low Auger recombination rates

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