z-logo
open-access-imgOpen Access
Alkaline earth stannates: The next silicon?
Author(s) -
Sohrab IsmailBeigi,
F. J. Walker,
SangWook Cheong,
Karin M. Rabe,
Charles Ahn
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4921338
Subject(s) - stannate , materials science , perovskite (structure) , semiconductor , silicon , electron mobility , nanotechnology , optoelectronics , engineering physics , oxide , semiconductor materials , metallurgy , chemical engineering , zinc , engineering
Semiconductor materials are being used in an increasingly diverse array of applications, with new device concepts being proposed each year for solar cells, flat-panel displays, sensors, memory, and spin transport. This rapid progress of invention outpaces the development of new semiconductor materials with the required properties and performance. In many applications, high carrier mobility at room temperature is required in addition to specific functional properties critical to the device concept. We review recent developments on high mobility stannate perovskite oxide materials and devices

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom