The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Zendy

M.-H. Liao | Zendy; C. Lien | Zendy

Open Access

The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

Author(s) -

M.-H. Liao,

C. Lien

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4921023

Subject(s) - ohmic contact , insulator (electricity) , materials science , dielectric , semiconductor , electrical resistivity and conductivity , optoelectronics , conductivity , condensed matter physics , electrical engineering , nanotechnology , chemistry , physics , engineering , layer (electronics)

Five different kinds of insulators including BaTiO3, TiO2, Al2O3, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S) ohmic contact structure are studied. The effect for the dielectric constant (ε) of inserted insulator and the conduction band offset (CBO) between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV) to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO is not pretty high (∼10)

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