Open AccessQuantum confinement in transition metal oxide quantum wells
Author(s) -
Miri Choi,
Chungwei Lin,
Matthew Butcher,
Cesar Rodriguez,
Qian He,
Agham Posadas,
Albina Y. Borisevich,
Stefan Zollner,
Alexander A. Demkov
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4921013
Subject(s) - quantum well , molecular beam epitaxy , materials science , quantum dot , oxide , condensed matter physics , ellipsometry , absorption edge , absorption (acoustics) , dielectric , substrate (aquarium) , potential well , band gap , molecular physics , thin film , optoelectronics , chemistry , epitaxy , optics , nanotechnology , physics , laser , oceanography , layer (electronics) , geology , metallurgy , composite material
We report on the quantum confinement in SrTiO3 (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO3 (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV–6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.
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