Ferromagnetism in proton irradiated 4H-SiC single crystal | Zendy

Ren-Wei Zhou | Zendy; XueChao Liu | Zendy; Huajie Wang | Zendy; Weibin Chen | Zendy; Fei Li | Zendy; Shi-Yi Zhuo | Zendy; Shi Er-Wei | Zendy

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Ferromagnetism in proton irradiated 4H-SiC single crystal

Author(s) -

Ren-Wei Zhou,

XueChao Liu,

Huajie Wang,

Weibin Chen,

Fei Li,

Shi-Yi Zhuo,

Shi Er-Wei

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4919611

Subject(s) - ferromagnetism , irradiation , materials science , proton , vacancy defect , condensed matter physics , single crystal , saturation (graph theory) , magnetization , wide bandgap semiconductor , crystallography , chemistry , nuclear physics , optoelectronics , physics , magnetic field , mathematics , combinatorics , quantum mechanics

Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism

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