Micro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence | Zendy

I. Otto | Zendy; Christian Mounir | Zendy; A. Nirschl | Zendy; Alexander Pfeuffer | Zendy; Thomas Schäpers | Zendy; Ulrich T. Schwarz | Zendy; Norwin von Malm | Zendy

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Micro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence

Author(s) -

I. Otto,

Christian Mounir,

A. Nirschl,

Alexander Pfeuffer,

Thomas Schäpers,

Ulrich T. Schwarz,

Norwin von Malm

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4918678

Subject(s) - photoluminescence , materials science , electroluminescence , optoelectronics , light emitting diode , passivation , wavelength , diode , epitaxy , blueshift , layer (electronics) , optics , nanotechnology , physics

We investigated the influence of a l-pixelated chip process on the photoluminescence (PL) andelectroluminescence (EL) of a monolithic InGaN/GaN based blue light emitting diode with a continuous n-GaN layer. Particularly, we observed the impact of the metallic p-contact on the PL emission wavelength. A PL wavelength shift in the order of 10 nm between contacted and isolated areaswas assigned to screening of internal piezoelectric fields due to charge carrier accumulation. lPLand lEL mappings revealed correlated emission wavelength and intensity inhomogeneities, causedby the epitaxial growth process. The edges of single pixels were investigated in detail via resonantconfocal bias-dependent lPL. No influence on the intensity was observed beyond 300 nm awayfrom the edge, which indicated a good working edge passivation. Due to the low lateral p-GaN conductivity, the lPL intensity was enhanced at isolated areas

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