Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
Author(s) -
K. E. Aretouli,
Polychronis Tsipas,
D. Tsoutsou,
Jose MarquezVelasco,
Evangelia Xenogiannopoulou,
Sigiava Aminalragia Giamini,
E. Vassalou,
Nikolaos Kelaidis,
A. Dimoulas
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4917422
Subject(s) - heterojunction , molecular beam epitaxy , van der waals force , band offset , semiconductor , x ray photoelectron spectroscopy , epitaxy , scanning tunneling microscope , materials science , electronic band structure , surface reconstruction , condensed matter physics , optoelectronics , chemistry , layer (electronics) , nanotechnology , band gap , valence band , physics , molecule , surface (topology) , geometry , organic chemistry , nuclear magnetic resonance , mathematics
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