Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60 | Zendy

Cleber F. N. Marchiori | Zendy; Natasha A. D. Yamamoto | Zendy; Carolina Ferreira de Matos | Zendy; Jiri Kujala | Zendy; Andréia G. Macedo | Zendy; F. Tuomisto | Zendy; Aldo J. G. Zarbin | Zendy; Marlus Koehler | Zendy; Lucimara S. Roman | Zendy

Open Access

Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60

Author(s) -

Cleber F. N. Marchiori,

Natasha A. D. Yamamoto,

Carolina Ferreira de Matos,

Jiri Kujala,

Andréia G. Macedo,

F. Tuomisto,

Aldo J. G. Zarbin,

Marlus Koehler,

Lucimara S. Roman

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4916515

Subject(s) - materials science , annealing (glass) , acceptor , heterojunction , copolymer , organic solar cell , polymer solar cell , bilayer , fullerene , chemical engineering , electron mobility , exciton , polymer , dissociation (chemistry) , energy conversion efficiency , analytical chemistry (journal) , optoelectronics , chemistry , composite material , organic chemistry , membrane , condensed matter physics , physics , engineering , biochemistry

In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C60 as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 °C. Space charge limited measurements of the hole mobility (μ) in PSiF-DBT give μ ∼ 1.0 × 10−4 cm2/(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron annihilation spectroscopy experiments revealed that PSiF-DBT films are well stacked even without the thermal treatment. The variations in the transport of holes upon annealing are then small. As a consequence, the PCE rise was mainly induced by the increase of the polymer surface roughness that leads to a more effective interface for exciton dissociation at the PSiF-DBT/fullerene heterojunction.Peer reviewe

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