Open AccessEffect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
Author(s) -
Manolis Wallace,
P. R. Edwards,
Menno J. Kappers,
M. A. Hopkins,
Fabrice Oehler,
S. Sivaraya,
Rachel A. Oliver,
C. J. Humphreys,
D.W.E. Allsopp,
Robert Martin
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4915628
Subject(s) - cathodoluminescence , optoelectronics , materials science , light emitting diode , luminescence , quantum well , diode , electron beam induced current , signal (programming language) , laser , optics , silicon , physics , computer science , programming language
In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal
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