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Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)
Author(s) -
John D. Perkins,
Geoffrey M. Foster,
M. Myer,
Sonali Mehra,
J.M. Chauveau,
A. Hierro,
A. RedondoCubero,
Wolfgang Windl,
L. J. Brillson
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4915491
Subject(s) - cathodoluminescence , materials science , analytical chemistry (journal) , zinc , spectroscopy , doping , crystallographic defect , isostructural , surface photovoltage , crystallography , chemical physics , chemistry , metallurgy , crystal structure , luminescence , physics , optoelectronics , chromatography , quantum mechanics
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1−xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors

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