Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3thin films deposited on CaTiO3-buffered silicon substrates | Zendy

Carlo Adamo | Zendy; Laurence Méchin | Zendy; T. Heeg | Zendy; Michael B. Katz | Zendy; Silvana Mercone | Zendy; Bruno Guillet | Zendy; Sheng Wu | Zendy; JeanMarc Routoure | Zendy; J. Schubert | Zendy; W. Zander | Zendy; Ranjeev Misra | Zendy; P. Schiffer | Zendy; Xiaoqing Pan | Zendy; Darrell G. Schlom | Zendy

Open Access

Enhanced electrical and magnetic properties in La_0.7Sr_0.3MnO₃thin films deposited on CaTiO₃-buffered silicon substrates

Author(s) -

Carlo Adamo,

Laurence Méchin,

T. Heeg,

Michael B. Katz,

Silvana Mercone,

Bruno Guillet,

Sheng Wu,

JeanMarc Routoure,

J. Schubert,

W. Zander,

Ranjeev Misra,

P. Schiffer,

Xiaoqing Pan,

Darrell G. Schlom

Publication year - 2015

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4915486

Subject(s) - materials science , silicon , magnetoresistance , molecular beam epitaxy , epitaxy , electrical resistivity and conductivity , thin film , heterojunction , layer (electronics) , curie temperature , optoelectronics , analytical chemistry (journal) , nanotechnology , ferromagnetism , condensed matter physics , magnetic field , electrical engineering , physics , engineering , quantum mechanics , chemistry , chromatography

International audienceWe investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100)Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of thecolossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic andelectrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-bufferedsilicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon(SrTiO3/Si). In addition to possessing a higher Curie temperature and a highermetal-to-insulator transition temperature, the electrical resistivity and 1/ f noise levelat 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 bufferlayer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin filmson silicon substrates

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