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International audienceWe investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100)Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of thecolossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic andelectrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-bufferedsilicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon(SrTiO3/Si). In addition to possessing a higher Curie temperature and a highermetal-to-insulator transition temperature, the electrical resistivity and 1/ f noise levelat 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 bufferlayer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin filmson silicon substrates

apl materials

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3thin films deposited on CaTiO3-buffered silicon substrates