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Although a through-silicon via (TSV) is widely used in three-dimensional integrated circuit systems, one of its major design challenges is noise coupling between TSVs and active devices. This paper investigates noise coupling between TSVs and active devices for 20/14-nm technology nodes. The effect of variations of structural parameters on noise coupling was examined using a three-dimensional full-wave electromagnetic field solver and its result was explained. Additionally, transient analysis on coupling noise was conducted with Synopsys TCAD. Furthermore, a combined strategy employing doped signal TSVs and ‘bare’ ground TSVs was proposed and compared with conventional signal/ground schemes. Demonstrated to improve noise isolation effectively, the proposed strategy is inherently advantageous to circuits of advanced technology nodes compared with other noise isolation schemes, for it demands no modification of the original circuit design, placement and routing

Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes