Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers | Zendy

Nicolas ThierryJebali | Zendy; Chihiro Kawahara | Zendy; Tetsuya Miyazawa | Zendy; Hidekazu Tsuchida | Zendy; Tsunenobu Kimoto | Zendy

Open Access

Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

Author(s) -

Nicolas ThierryJebali,

Chihiro Kawahara,

Tetsuya Miyazawa,

Hidekazu Tsuchida,

Tsunenobu Kimoto

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4915128

Subject(s) - photoluminescence , stacking , materials science , wafer , doping , spectroscopy , imaging spectroscopy , stacking fault , optoelectronics , analytical chemistry (journal) , optics , chemistry , nuclear magnetic resonance , physics , quantum mechanics , chromatography

This paper deals with the description and the application of an original photoluminescence (PL) imaging technique on thick, lighly n-type doped 4H-SiC epilayers for in-grown stacking fault (SF) identification. This technique, call "photoluminescence imaging spectroscopy" (PLIS), compares different PL imaging pictures in order to create a new picture which displays the location and an approximation of the maximum photoemission wavelength of SFs at room temperature. Five types of SF have been detected and identified by PLIS on two different wafers. The origin of SF type modification during the growth is also discussed in this work

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