Open AccessLaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system
Author(s) -
Ke Zou,
Sohrab IsmailBeigi,
Kim Kisslinger,
Xuan Shen,
Dong Su,
F. J. Walker,
Charles Ahn
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4914310
Subject(s) - materials science , condensed matter physics , electron , oxide , metal–insulator transition , mott insulator , fermi gas , insulator (electricity) , doping , electron mobility , thermal conduction , chemical physics , effective mass (spring–mass system) , metal , nanotechnology , optoelectronics , chemistry , physics , composite material , quantum mechanics , metallurgy
We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO3, and a band insulator, KTaO3. For LaTiO3/KTaO3 interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO3-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm2/V s) of SrTiO3 at room temperature. By using KTaO3, we achieve mobilities in LaTiO3/KTaO3 interfaces as high as 21 cm2/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO3. By density functional theory, we attribute the higher mobility in KTaO3 2DEGs to the smaller effective mass for electrons in KTaO3
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