Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits | Zendy

Luisa Petti | Zendy; Hendrik Faber | Zendy; Niko Münzenrieder | Zendy; Giuseppe Cantarella | Zendy; P. Patsalas | Zendy; Gerhard Tröster | Zendy; Thomas D. Anthopoulos | Zendy

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Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Author(s) -

Luisa Petti,

Hendrik Faber,

Niko Münzenrieder,

Giuseppe Cantarella,

P. Patsalas,

Gerhard Tröster,

Thomas D. Anthopoulos

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4914085

Subject(s) - materials science , transistor , indium , optoelectronics , thin film transistor , polyimide , fabrication , thin film , oxide , electronic circuit , nanotechnology , electrical engineering , voltage , metallurgy , layer (electronics) , medicine , alternative medicine , pathology , engineering

Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm

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