Open AccessDefect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices
Author(s) -
John Robertson,
Yuzheng Guo,
Liang Lin
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4913832
Subject(s) - passivation , dangling bond , materials science , oxide , semiconductor , diffusion , metal , substrate (aquarium) , surface states , optoelectronics , condensed matter physics , nanotechnology , surface (topology) , metallurgy , silicon , layer (electronics) , physics , thermodynamics , geometry , oceanography , mathematics , geology
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