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Intermediate valence in single crystals of (Lu1−xY bx)3Rh4Ge13 (0 ≤ x ≤ 1)
Author(s) -
K. Binod,
E. Morosan
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4913742
Subject(s) - materials science , x ray crystallography , valence (chemistry) , crystallography , germanium , single crystal , diffraction , chemistry , silicon , physics , optics , metallurgy , organic chemistry
Single crystals of (Lu1−x Y b x )3Rh4 Ge 13 were characterized by magnetization, specific heat, and electrical resistivity measurements. Doping Yb into the non-magnetic Lu3Rh4 Ge 13 compound tunes this cubic system’s properties from a superconductor with disordered metal normal state (x < 0.05) to a Kondo for 0.05 ≤ x ≤0.2 and intermediate valence at the highest Yb concentrations. The evidence for intermediate Yb valence comes from a broad maximum in the magnetic susceptibility and X-ray photoelectron spectroscopy. Furthermore, the resistivity displays a local maximum at finite temperatures at intermediate compositions x, followed by apparent metallic behavior closest to the Yb end compound in the series

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