Open AccessAll-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
Author(s) -
Useong Kim,
Chulkwon Park,
Taewoo Ha,
Young Mo Kim,
Nam Wook Kim,
Chanjong Ju,
Jisung Park,
Jaejun Yu,
Jae-Hoon Kim,
K. Char
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4913587
Subject(s) - materials science , optoelectronics , dielectric , epitaxy , heterojunction , doping , electron mobility , field effect , field effect transistor , perovskite (structure) , gate dielectric , transistor , layer (electronics) , nanotechnology , electrical engineering , crystallography , voltage , chemistry , engineering
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement