Open AccessCurrent transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
Author(s) -
Jie Hu,
Steve Stoffels,
Silvia Lenci,
Benoit Bakeroot,
R. Venegas,
G. Groeseneken,
Stefaan Decoutere
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4913575
Subject(s) - trapping , schottky barrier , schottky diode , cathode , materials science , optoelectronics , diode , anode , leakage (economics) , deep level transient spectroscopy , reverse leakage current , gallium nitride , electrode , chemistry , layer (electronics) , silicon , nanotechnology , macroeconomics , economics , ecology , biology
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