Open AccessChemical vapor deposition of silicon nitride film enhanced by surface-wave plasma for surface passivation of AlGaN/GaN device
Author(s) -
Hiroshi Okada,
Kansei Kawakami,
M. Shinohara,
Tomomi Ishimaru,
Hiroto Sekiguchi,
Akihiro Wakahara,
M. Furukawa
Publication year - 2015
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.4913542
Subject(s) - passivation , materials science , chemical vapor deposition , optoelectronics , silicon nitride , layer (electronics) , deposition (geology) , plasma enhanced chemical vapor deposition , silicon , wide bandgap semiconductor , hysteresis , dimethylsilane , nanotechnology , condensed matter physics , paleontology , physics , sediment , polymer chemistry , biology
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