Open AccessCharge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays
Author(s) -
Kamran Rasool,
M. A. Rafiq,
Mushtaq Ahmad,
Zahid Imran,
S.S. Batool,
Adnan Nazir,
Z. A. K. Durrani,
Md. Mahmudul Hasan
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4908569
Subject(s) - ohmic contact , trapping , materials science , variable range hopping , nanowire , nanoparticle , charge carrier , silicon , optoelectronics , space charge , silicon nanowires , nanotechnology , charge (physics) , thermal conduction , voltage , electron mobility , electron , electrical engineering , physics , ecology , engineering , layer (electronics) , quantum mechanics , composite material , biology
We investigate carrier transport properties of silicon nanowire (SiNW) arrays decorated with TiO2 nanoparticles (NPs). Ohmic conduction was dominant at lower voltages and space charge limited current with and without traps was observed at higher voltages. Mott’s 3D variable range hoping mechanism was found to be dominant at lower temperatures. The minimum hopping distance (Rmin) for n and p-SiNWs/TiO2 NPs devices was 1.5 nm and 0.68 nm, respectively, at 77 K. The decrease in the value of Rmin can be attributed to higher carrier mobility in p-SiNWs/TiO2 NPs than that of n-SiNWs/TiO2 NPs hybrid device
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