Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy
Author(s) -
Sathiabama T. Thirugnana,
Masaki Asakawa,
Kazuki Honda,
Atsushi Kawaharazuka,
Atsushi Tackeuchi,
Toshiki Makimōto,
Yoshiji Horíkoshi
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4908229
Subject(s) - reflection high energy electron diffraction , molecular beam epitaxy , electron diffraction , heterojunction , epitaxy , substrate (aquarium) , reflection (computer programming) , transmission electron microscopy , diffraction , photoluminescence , materials science , kikuchi line , optoelectronics , crystallography , optics , chemistry , nanotechnology , layer (electronics) , geology , physics , oceanography , computer science , programming language
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements
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