Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]
Author(s) -
Sanjay Kumar Jana,
Partha Mukhopadhyay,
Saptarsi Ghosh,
Sanjib Kabi,
Ankush Bag,
Rahul Kumar,
D. Biswas
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4907314
Subject(s) - sapphire , diffraction , x ray crystallography , materials science , resolution (logic) , crystallography , high resolution , physics , condensed matter physics , optics , chemistry , laser , computer science , geology , remote sensing , artificial intelligence
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom