Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs | Zendy

Michael V. Warren | Zendy; J. C. Canniff | Zendy; Hang Chi | Zendy; Fabián Naab | Zendy; Vladimir A. Stoica | Zendy; Roy Clarke | Zendy; Ctirad Uher | Zendy; R. S. Goldman | Zendy

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Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

Author(s) -

Michael V. Warren,

J. C. Canniff,

Hang Chi,

Fabián Naab,

Vladimir A. Stoica,

Roy Clarke,

Ctirad Uher,

R. S. Goldman

Publication year - 2015

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4906992

Subject(s) - thermoelectric effect , materials science , nanocrystal , microstructure , annealing (glass) , thermal conductivity , figure of merit , thermoelectric materials , nanocomposite , electrical resistivity and conductivity , superlattice , optoelectronics , nanotechnology , composite material , electrical engineering , thermodynamics , physics , engineering

We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

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