Open AccessErratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]
Author(s) -
Masanobu Hiroki,
Kazuhide Kumakura,
Yasuyuki Kobayashi,
Tetsuya Akasaka,
Toshiki Makimōto,
Hideki Yamamoto
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4906268
Subject(s) - substrate (aquarium) , materials science , optoelectronics , transistor , electron transfer , wide bandgap semiconductor , electron mobility , condensed matter physics , chemistry , physics , quantum mechanics , oceanography , voltage , geology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom