Open AccessH-tailored surface conductivity in narrow band gap In(AsN)
Author(s) -
A. V. Velichko,
A. Patanè,
M. Capizzi,
Ian Sandall,
D. Giubertoni,
O. Makarovsky,
A. Polimeni,
A. Krier,
Qiandong Zhuang,
Chee Hing Tan
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4906111
Subject(s) - conductivity , materials science , alloy , band gap , electrical resistivity and conductivity , electron mobility , wide bandgap semiconductor , surface conductivity , electron , electron density , analytical chemistry (journal) , condensed matter physics , crystallography , chemistry , metallurgy , optoelectronics , physics , chromatography , quantum mechanics
We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface
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