Open AccessDesign and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities
Author(s) -
Lloyd Tinkler,
P. M. Walker,
Edmund Clarke,
D. N. Krizhanovskii,
F. Bastiman,
M. Durska,
M. S. Skolnick
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4905907
Subject(s) - polariton , differential interference contrast microscopy , optoelectronics , materials science , condensed matter physics , gallium arsenide , characterization (materials science) , superlattice , photonics , quantum well , relaxation (psychology) , semiconductor , interference (communication) , microscopy , optics , physics , nanotechnology , laser , psychology , social psychology , channel (broadcasting) , electrical engineering , engineering
The presence of dislocations arising from strain relaxation strongly affects polaritons through their photonic component and ultimately limits experiments involving polariton propagation. In this work, we investigate the range of growth parameters to achieve high optical quality GaAs/AlxGa1−xAs-based microcavities containing strained InxGa1−xAs quantum wells and using differential interference contrast (Nomarski) microscopy deduce a design rule for homogeneous versus disordered structures. We illustrate the effect of disorder by contrasting observations of polariton condensates in relaxed and unrelaxed microcavities. In our optimized device, we generate a polariton condensate and deduce a lifetime for the interacting polariton fluid of 39 ± 2 ps.
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