Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)] | Zendy

José Luis Padilla | Zendy; Cem Alper | Zendy; F. Gámiz | Zendy; Adrian M. Ionescu | Zendy

Open Access

Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)]

Author(s) -

José Luis Padilla,

Cem Alper,

F. Gámiz,

Adrian M. Ionescu

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4905866

Subject(s) - germanium , field (mathematics) , field effect transistor , bilayer , quantum dot , condensed matter physics , transistor , electron , physics , optoelectronics , chemistry , quantum mechanics , silicon , membrane , mathematics , voltage , pure mathematics , biochemistry

Keywords: band-to-band tunneling ; heterogate electron-hole bilayer tunnel field-effect transistor ; quantum confinement ; inversion layer formation Reference EPFL-ARTICLE-208004doi:10.1063/1.4905866View record in Web of Science Record created on 2015-05-26, modified on 2016-08-09

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