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Keywords: band-to-band tunneling ; heterogate electron-hole bilayer tunnel field-effect transistor ; quantum confinement ; inversion layer formation Reference EPFL-ARTICLE-208004doi:10.1063/1.4905866View record in Web of Science Record created on 2015-05-26, modified on 2016-08-09

applied physics letters

Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. <b>106</b>, 026102 (2015)]

Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)]