Microwave power coupling in a surface wave excited plasma
Author(s) -
Satyananda Kar,
L. Alberts,
Hiroyuki Kousaka
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4905713
Subject(s) - plasma , microwave , plasma processing , plasma etching , etching (microfabrication) , ion source , materials science , waves in plasmas , atomic physics , plasma parameters , inductively coupled plasma , coupling (piping) , chemistry , physics , layer (electronics) , nanotechnology , quantum mechanics , metallurgy
In recent decades, different types of plasma sources have been used for various types of plasma processing, such as, etching and thin film deposition. The critical parameter for effective plasma processing is high plasma density. One type of high density plasma source is Microwave sheath-Voltage combination Plasma (MVP). In the present investigation, a better design of MVP source is reported, in which over-dense plasma is generated for low input microwave powers. The results indicate that the length of plasma column increases significantly with increase in input microwave power
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