Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures | Zendy

Deepthi Nagulapally | Zendy; R. P. Joshi | Zendy; A. K. Pradhan | Zendy

Open Access

Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

Author(s) -

Deepthi Nagulapally,

R. P. Joshi,

A. K. Pradhan

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4905702

Subject(s) - piezoelectricity , high electron mobility transistor , electric field , materials science , optoelectronics , inverse , wide bandgap semiconductor , transistor , layer (electronics) , barrier layer , composite material , electrical engineering , physics , voltage , engineering , quantum mechanics , geometry , mathematics

The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides

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