Open AccessGrowth and optical characteristics of high-quality ZnO thin films on graphene layers
Author(s) -
Suk In Park,
Youngbin Tchoe,
Hyeonjun Baek,
Jaehyuk Heo,
Jerome K. Hyun,
Janghyun Jo,
Miyoung Kim,
Nam-Jung Kim,
GyuChul Yi
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4905488
Subject(s) - materials science , graphene , photoluminescence , thin film , optoelectronics , layer (electronics) , transmission electron microscopy , analytical chemistry (journal) , nanotechnology , chemistry , chromatography
We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy
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