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We present a method based on steady state photoluminescence (PL) imaging and modelling of the PL intensity profile across a grain boundary (GB) using 2D finite element analysis, to quantify the recombination strength of a GB in terms of the effective surface recombination velocity (Seff). This quantity is a more meaningful and absolute measure of the recombination activity of a GB compared to the commonly used signal contrast, which can strongly depend on other sample parameters, such as the intra-grain bulk lifetime. The method also allows the injection dependence of the Seff of a given GB to be explicitly determined. The method is particularly useful for studying the responses of GBs to different cell processing steps, such as phosphorus gettering and hydrogenation. The method is demonstrated on double-side passivated multicrystalline wafers, both before and after gettering, and single-side passivated wafers with a strongly non-uniform carrier density profile depth-wise. Good agreement is found between ...

Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging