Electrostatic force microscopy and electrical isolation of etched few-layer graphene nano-domains
Author(s) -
D. Patrick Hunley,
Abhishek Sundararajan,
Mathias J. Boland,
Douglas R. Strachan
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4904709
Subject(s) - graphene , materials science , electrical resistivity and conductivity , resistor , optoelectronics , layer (electronics) , etching (microfabrication) , electrical resistance and conductance , capacitance , electrostatic force microscope , nanotechnology , nano , electrode , microscopy , composite material , atomic force microscopy , optics , chemistry , electrical engineering , voltage , engineering , physics
Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×1012 Ω with a corresponding gap resistivity greater than about 3×1014 Ω⋅nm. This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconn...
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