Effect of ultraviolet illumination on metal oxide resistive memory | Zendy

José Ramón Durán Retamal | Zendy; ChenFang Kang | Zendy; ChihHsiang Ho | Zendy; JrJian Ke | Zendy; Wen-Yuan Chang | Zendy; JrHau He | Zendy

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Effect of ultraviolet illumination on metal oxide resistive memory

Author(s) -

José Ramón Durán Retamal,

ChenFang Kang,

ChihHsiang Ho,

JrJian Ke,

Wen-Yuan Chang,

JrHau He

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4904396

Subject(s) - ultraviolet , materials science , optoelectronics , capacitor , reset (finance) , resistive touchscreen , resistive random access memory , voltage , oxide , oxygen , metal , chemistry , electrical engineering , metallurgy , organic chemistry , financial economics , economics , engineering

We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices

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