Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry | Zendy

A. J. Qviller | Zendy; Andrew J. C. Dennison | Zendy; H. Haug | Zendy; Chang Chuan You | Zendy; Ida Hasle | Zendy; Erik Østreng | Zendy; Helmer Fjellvåg | Zendy; Alexeï Vorobiev | Zendy; Björgvin Hjӧrvarsson | Zendy; Erik Stensrud Marstein | Zendy; Christoph Frommen | Zendy; Bjørn C. Hauback | Zendy

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Thermal stability of photovoltaic a-Si:H determined by neutron reflectometry

Author(s) -

A. J. Qviller,

Andrew J. C. Dennison,

H. Haug,

Chang Chuan You,

Ida Hasle,

Erik Østreng,

Helmer Fjellvåg,

Alexeï Vorobiev,

Björgvin Hjӧrvarsson,

Erik Stensrud Marstein,

Christoph Frommen,

Bjørn C. Hauback

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4904340

Subject(s) - neutron reflectometry , passivation , reflectometry , materials science , silicon , annealing (glass) , wafer , amorphous silicon , amorphous solid , thin film , crystalline silicon , carrier lifetime , neutron , hydrogen , analytical chemistry (journal) , scattering , optoelectronics , neutron scattering , layer (electronics) , optics , small angle neutron scattering , chemistry , nanotechnology , crystallography , organic chemistry , time domain , computer science , composite material , quantum mechanics , chromatography , computer vision , physics

Neutron and X-ray reflectometry were used to determine the layer structure and hydrogen content of thin films of amorphous silicon (a-Si:H) deposited onto crystalline silicon (Si) wafers for surface passivation in solar cells. The combination of these two reflectometry techniques is well suited for non-destructive probing of the structure of a-Si:H due to being able to probe buried interfaces and having sub-nanometer resolution. Neutron reflectometry is also unique in its ability to allow determination of density gradients of light elements such as hydrogen (H). The neutron scattering contrast between Si and H is strong, making it possible to determine the H concentration in the deposited a-Si:H. In order to correlate the surface passivation properties supplied by the a-Si:H thin films, as quantified by obtainable effective minority carrier lifetime, photoconductance measurements were also performed. It is shown that the minority carrier lifetime falls sharply when H has been desorbed from a-Si:H by annealing.

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