Open AccessContinuous electrowetting at the low concentration electrolyte-insulator-semiconductor junction
Author(s) -
S. Arscott
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4903513
Subject(s) - electrowetting , semiconductor , dielectric , electrolyte , materials science , insulator (electricity) , depletion region , doping , intrinsic semiconductor , silicon on insulator , wetting , optoelectronics , space charge , semiconductor device , silicon , analytical chemistry (journal) , nanotechnology , electrode , chemistry , layer (electronics) , physics , composite material , electron , quantum mechanics , chromatography
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